Non-Polar and semi-polar Free-standing GaN substrates A M SP
| 产品型号 | GaN-FS-A-U/N/SI-S |
| 尺寸 | （5.0~10.0）× 10.0 mm2 |
| （5.0~10.0）× 20.0mm2 | |
| 厚度 | 350±25μm |
| 晶面 | -1120 |
| 斜切角 | -1°±0.2° |
| TTV | ≤10µm |
| 弯曲度 | ≤10µm |
| 导电类型 | N-type < 0.1Ω·cm |
| 电阻率（300 K） | N-type < 0.05Ω·cm |
| Semi-Insulating > 106Ω·cm | |
| 位错密度 | From 1x105 to 3x106cm-2 |
| 有效面积 | >90% |
| 抛光 | Front Surface：Ra＜0.2 nm（polished）; |
| Back Surface：1-3nm（fine ground）; | |
| option：<0.2nm（polished） | |
| 包装 | Packaged in a class 100 clean room environment, |
|
in single container,under a nitrogen atmosphere.
|
| 产品型号 | GaN-FS-M-U/N/SI-S |
| 尺寸 | （5.0~10.0）× 10.0 mm2 |
| （5.0~10.0）× 20.0mm2 | |
| 厚度 | 350±25μm |
| 晶面 | -1100 |
| 斜切角 | -1°±0.2° |
| TTV | ≤10µm |
| 弯曲度 | ≤10µm |
| 导电类型 | N-type < 0.1Ω·cm |
| 电阻率（300 K） | N-type < 0.05Ω·cm |
| Semi-Insulating > 106Ω·cm | |
| 位错密度 | From 1x105 to 3x106 cm-2 |
| 有效面积 | >90% |
| 抛光 | Front Surface：Ra＜0.2 nm（polished） |
| Back Surface：1-3nm(fine ground); | |
| option：<0.2nm(polished). | |
| 包装 | Packaged in a class 100 clean room environment, |
| in single container,under a nitrogen atmosphere. |
| 产品型号 | GaN-FS-SP-U/N/SI-S |
| 尺寸 | （5.0~10.0）× 10.0 mm2 |
| （5.0~10.0）× 20.0mm2 | |
| 厚度 | 350±25μm |
| 晶面 | -2021 |
| -2021 | |
| -1122 | |
| -1011 | |
| 斜切角 | -1°±0.2° |
| TTV | ≤10µm |
| 弯曲度 | ≤10µm |
| 导电类型 | N-type < 0.1Ω·cm |
| 电阻率（300 K） | N-type < 0.05Ω·cm |
| Semi-Insulating > 106Ω·cm | |
| 位错密度 | From 1x105 to 3x106 cm-2 |
| 有效面积 | >90% |
| 抛光 | Front Surface：Ra＜0.2 nm（polished） |
| Back Surface：1-3nm（fine ground）; | |
| option：<0.2nm（polished）. | |
| 包装 | Packaged in a class 100 clean room environment, |
| in single container,under a nitrogen atmosphere. |
SEMICONDUCTOR LIGHTING
GaN Substrates GaN wafer
LED(Light-Emitting diode)has series of advantages such as high illumination efficiency, full color, energy conservation, long service life, quick response speed, small size, solid light source, cold light source(without heat),friendly to environment, easily motivated, etc; which can be widely used in display of various signals and graphics.
Recently, quantities of breakthrough and progress of LED have been achieved on GaN-based materials, i.e. high efficiency blue and white LED has been made out not only to realize large-screen full color display, but also to replace the incandescent lamp and fluorescent lamp, thus can totally change our lives.
LED applications:
All color FPD: LCD backlight, LED monitor.
Future direction:
High-power LED, Mirco-LED, GaN red light LED and white light LED
BLUE AND GREEN LD
GaN Substrates GaN wafer .In semiconductor lasers’ family, mid-IR or far-IR lasers(830nm/1064nm)are both important parts, but there is another import member absent – short wavelength(visible light) lasers, namely blue and green lasers.
In 2004, independently developed GaN-based laser diodes(blue LDs) have been achieved successfully, now it’s on the way from research to application.
LDs applications：
blue LDs(405nm <400—415nm>) can be used for high-density data storage, laser print, laser display, laser projection camera, etc.
Future：
GaN-based MQWs LDs
Short wavelength laser: Green/UV/Deep UV
HIGH POWER ELECTRONIC POWER DEVICE
GaN Substrates GaN wafer ,GaN applications in power electronic devices：
MESFET,HFET,MODFET,HBT;RF Power Transistors;Hight Frequency MMICs;Hight Voltage Electronics;Hight Temperature Electronics;Mixed signal GaN/Si Integration.
Future：
GaN has both high breakdown electric field(like SiC) and high frequency(like GaAs/GeSi/InP). It has more potential in increasing the work frequency of power electronic devices than SiC, and the application future is better than SiC.
Contact me:
Miss Linda
Customer Manager
Tel: 86 731 23672981
Mobile:+86 13874120538
WhatsApp: +86 13874120538
QQ:2115563697 Skype:linda@hnktgm.com
Email: sales@hnktgm.com
