4 inch GaN Templates

产品型号 GaN-T-C-U-C100
尺寸 Ф 100 ± 0.1 mm
厚度 4.5±0.5 µm, 20±2 µm
晶体取向 C-plane(0001) ± 0.5°
导电类型 N-type(Undoped)
电阻率(300 K) < 0.5Ω·cm
载流子浓度 < 5x1017cm-3
迁移率 ~ 300cm2/V•s
位错密度 Less than 5x108 cm-2(estimated by FWHMs of XRD)
衬底结构 GaN on sapphire (standard :SSP option:DSP)
有效面积 >90%
包装 Packaged in a class 100 clean room environment, in cassette of 25pcs 
or single container , under a nitrogen atmosphere.
产品型号 GaN-T-C-N-C100
尺寸 Ф 100 ± 0.1 mm
厚度 4.5±0.5 µm, 20±2 µm
晶体取向 C-plane(0001) ± 0.5°
导电类型 N-type(Si-doped)
电阻率(300 K) < 0.05Ω·cm
载流子浓度 >  1x1018cm-3
迁移率 ~ 200cm2/V•s
位错密度 Less than 5x108 cm-2(estimated by FWHMs of XRD)
衬底结构 GaN on sapphire (standard :SSP option:DSP)
有效面积 >90%
包装 Packaged in a class 100 clean room environment, in cassette of 25pcs 
or single container , under a nitrogen atmosphere.

SEMICONDUCTOR LIGHTING

2 inch Free-Standing GaN Substrates(Si-doped)

GaN Substrates GaN wafer
LED(Light-Emitting diode)has series of advantages such as high illumination efficiency, full color, energy conservation, long service life, quick response speed, small size, solid light source, cold light source(without heat),friendly to environment, easily motivated, etc; which can be widely used in display of various signals and graphics. 
Recently, quantities of breakthrough and progress of LED have been achieved on GaN-based materials, i.e. high efficiency blue and white LED has been made out not only to realize large-screen full color display, but also to replace the incandescent lamp and fluorescent lamp, thus can totally change our lives.
LED applications: 
All color FPD: LCD backlight, LED monitor.
Future direction:
High-power LED, Mirco-LED, GaN red light LED and white light LED


BLUE AND GREEN LD

2 inch Free-Standing GaN Substrates(Si-doped)

GaN Substrates GaN wafer .In semiconductor lasers’ family, mid-IR or far-IR lasers(830nm/1064nm)are both important parts, but there is another import member absent – short wavelength(visible light) lasers, namely blue and green lasers. 
In 2004, independently developed GaN-based laser diodes(blue LDs) have been achieved successfully, now it’s on the way from research to application.
LDs applications:
blue LDs(405nm  <400—415nm>) can be used for high-density data storage, laser print, laser display, laser projection camera, etc. 
Future: 
GaN-based MQWs LDs
Short wavelength laser: Green/UV/Deep UV


HIGH POWER ELECTRONIC POWER DEVICE

2 inch Free-Standing GaN Substrates(Si-doped)

GaN Substrates GaN wafer ,GaN applications in power electronic devices:
MESFET,HFET,MODFET,HBT;RF Power Transistors;Hight Frequency MMICs;Hight Voltage Electronics;Hight Temperature Electronics;Mixed signal GaN/Si Integration.
Future:
GaN has both high breakdown electric field(like SiC) and high frequency(like GaAs/GeSi/InP). It has more potential in increasing the work frequency of power electronic devices than SiC, and the application future is better than SiC.


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